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Bonding CVD diamond to WC-Co by high pressure : high temperature processing

Show simple item record Balzaretti, Naira Maria Pereira, Altair Soria Camerini, Rafael Vieira Santos, Sérgio Ivan dos Jornada, João Alziro Herz da Rodriguez, Martius Vicente Rodriguez y Endre, Ricardo B. 2020-07-20T00:56:05Z 2020-07-20T00:56:05Z 2007
dc.identifier.citation BALZARETTI, Naira Maria et al. Bonding cvd diamond to wc-co by high pressure: high temperature processing. Materials Research Society Simposium Proceedings, v. 987, 2007.
dc.description.abstract ABSTRACT: In this work we investigate the effect of processing at high pressure-high temperature (HPHT) on the adhesion of CVD diamond coatings on WC-Co substrates. The samples consisted of WC-Co substrates coated with thin diamond films (10 – 40 μm thick) grown by microwave plasma (MWCVD) CVD. The substrates were previously etched in order to remove the Co from the surface region. The adhesion of the film and its wear resistance improved after the HPHT treatment. SEM images of the cross section of the coated substrate revealed that Co infiltrated back to the region where it was previously removed. The results indicate that it is possible to take advantage of the HPHT plants already available around the world to produce, besides PCD’s and diamond powder, high-performance CVD diamond cutting tools with the advantage of requiring less demanding processing conditions.
dc.format.extent 6 p. : il.
dc.language.iso eng
dc.rights Open Access
dc.title Bonding CVD diamond to WC-Co by high pressure : high temperature processing
dc.type Artigo
dc.subject.keyword Nanometrologia : superfície e interface
dc.subject.keyword Metrologia de materiais

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